发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 In a semiconductor device using a low dielectric constant interlayer insulating film having low film strength and adhesion, film separation and film breakage during processing or packaging are suppressed by enhancing structural strength without affecting the chip area or arrangement of circuits. Conventionally, reinforcing wiring patterns (wiring dummy patterns) have been formed only in wiring layers. In the present invention, many reinforcing via patterns which are not electrically connected with the circuits are formed in a region of the interlayer insulating film where the reinforcing wiring patterns formed in the wiring layers on both sides overlap, thereby connecting the reinforcing wiring patterns with each other.
申请公布号 WO2005096364(A1) 申请公布日期 2005.10.13
申请号 WO2005JP06180 申请日期 2005.03.30
申请人 NEC CORPORATION;TAGAMI, MASAYOSHI;HAYASHI, YOSHIHIRO 发明人 TAGAMI, MASAYOSHI;HAYASHI, YOSHIHIRO
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/00;H01L23/485;H01L23/522;H01L23/58;H01L27/04 主分类号 H01L21/3205
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