INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an insulated gate type semiconductor device which can certainly raise a breakdown voltage and reduce an on-state resistance and can be simply manufactured, and to provide a method of manufacturing the same.

SOLUTION: The semiconductor device 100 comprises an n+-type source region 31, an n+-type drain region 11, a p--type body region 41 and an n--type drift region 12. Moreover, a gate trench 21 which penetrates the p--type body region 41, a breakdown holding trench 27, and a breakdown voltage holding trench 27; and a termination trench 62 are provided, respectively. And, under the each trench, P floating regions 51, 57 and 53 are formed, respectively. The inner diameter L1 of the gate trench 21 of the minimum diameter is wider than the interval L2 between the gate trenches 21 and 21 of a cell area. Moreover, the interval L3 between the gate trench 21 of the minimum diameter and the breakdown holding trench 27 is narrower than the interval L2 between the gate trenches 21 and 21 of the cell area.

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