发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which design efficiency is improved, while high functions are realized by including deterioration of source impedance. <P>SOLUTION: The device is formed of a bonding pad consisting of aluminum formed to be comparatively thick with which it is connected to an outer lead and an aluminum layer formed in the same process as that for the bonding pad. A power supply trunk is constituted to transmit power voltage and ground potential to an internal circuit. A plurality of wiring layers, formed of copper wiring layers connecting the power supply trunk and a semiconductor region constituting the corresponding internal circuit, are arranged below the lower layer of the power supply trunk. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005286083(A) 申请公布日期 2005.10.13
申请号 JP20040097431 申请日期 2004.03.30
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMAWAKI KENTARO;YASU YOSHIHIKO;IGARASHI YASUTO;KURAISHI TAKASHI;YANAGISAWA KAZUMASA
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L27/04 主分类号 H01L23/52
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