| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical-cavity surface-emitting semiconductor laser including a photodetection section that has flexibility in structure, as well as is capable of high-speed drive. SOLUTION: The vertical cavity surface-emitting semiconductor laser 100 comprises a light-emitting device section 140, and photodetection section 120 formed on the light-emitting device section 140 with a light-emitting surface 108. The light-emitting device section 140 comprises a first mirror 102, active layer 103 arranged above the first mirror 102 and second mirror 104 arranged above the active layer 103. The second mirror 104 is composed of a first region 104a and second region 104b. This second region 104a is in contact with the photodetection section 120, and the resistance of the second region 104b is higher than that of the first region 104a. COPYRIGHT: (C)2006,JPO&NCIPI
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