| 摘要 |
PROBLEM TO BE SOLVED: To improve the covering property of a light-shielding film with respect to level difference caused by a charge transfer electrode etc., to improve the adhesion between the light-shielding film and an underlying insulating film, and to achieve refinement, by making the light-shielding portion and an adherent layer thinner. SOLUTION: In this solid-state imaging device, an opening is formed on a light-receptive portion 10, and a light-shielding film 6 consisting of a high-melting point metal layer is formed to cover the charge transfer electrode 3. In order to improve the adhesion between the light-shielding film 6 and an underlying insulating film 4, the adherent layer 5A consisting of a high-melting point metal layer is formed under the light-shielding film 6 and over the insulating film 4, according to a CVD process. According to the CVD process, the adherent layer 5A having a better level difference covering properties can be obtained than a sputtering process. COPYRIGHT: (C)2006,JPO&NCIPI
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