发明名称 |
Positive resist compositions and patterning process |
摘要 |
A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
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申请公布号 |
US2005227174(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050101591 |
申请日期 |
2005.04.08 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;KANEKO TATSUSHI |
分类号 |
G03C1/492;G03F7/004;G03F7/039;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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