Semiconductor structures and methods for forming patterns using nitrogen-free SiCOH anti-reflective layers

摘要

A semiconductor structure includes a material layer on a substrate and to be patterned, an amorphous carbon layer on the material layer to be patterned, an N-free anti-reflective layer on the amorphous carbon layer, and a photoresist layer on the N-free anti-reflective layer. The N-free anti-reflective layer contains SiC_XO_YH_Z as a main element. Related methods of patterning semiconductor structures also are provided.