发明名称 |
Gallium nitride-based semiconductor light-emitting device |
摘要 |
Provided is a gallium nitride-based semiconductor light-emitting device comprising a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single crystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
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申请公布号 |
US2005224824(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040911562 |
申请日期 |
2004.08.05 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM JE W.;OH JEONG T.;KIM DONG J.;KIM SUN W.;LEE SOO M. |
分类号 |
H01L21/205;H01L29/22;H01L33/12;H01L33/32;(IPC1-7):H01L29/22 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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