发明名称 |
Positive resist compositions and patterning process |
摘要 |
A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
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申请公布号 |
US2005227173(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050101568 |
申请日期 |
2005.04.08 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;KANEKO TATSUSHI |
分类号 |
G03C1/492;G03F7/004;G03F7/039;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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