发明名称 |
Magneto-resistive memory cell structures with improved selectivity |
摘要 |
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.
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申请公布号 |
US2005226039(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050146482 |
申请日期 |
2005.06.06 |
申请人 |
ZHU THEODORE;LU YONG;ARROTT ANTHONY |
发明人 |
ZHU THEODORE;LU YONG;ARROTT ANTHONY |
分类号 |
G11C11/00;G11C11/15;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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