| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film piezoelectric material element in which the influence affecting the deterioration of the oxide film, retaining in an electrode film to element characteristics is alleviated, and to provide a method of manufacturing the same. <P>SOLUTION: In the thin film piezoelectric material element 10, the main component of the outermost layers 28A, 28B of oxide films 20A, 20B covering a laminate 11 becomes ZrO<SB>2</SB>. The value (190GPa) of the Young's modulus of this ZrO<SB>2</SB>becomes a markedly low value as compared with the value (245GPa) of the Young's modulus of the MgO. Thus, the oxide films 20A, 20B has small influence affecting the reduction of the displacing amount of the piezoelectric material films 16A, 16B, as compared with the MgO thin film retaining in a conventional thin-film piezoelectric material element. Accordingly, in the thin-film piezoelectric material element 10, the influence affecting the oxide film to the deterioration of the element characteristics is reduced, as compared with the conventional thin-film piezoelectric material element. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
