| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the lower side shading film of a thin-film transistor is formed as a film which is superior in low resistance and light-shielding properties. <P>SOLUTION: The semiconductor device comprises a gate electrode of the thin-film transistor provided on a substrate; a semiconductor film, serving as an active layer of the thin-film transistor provided between the substrate and the gate electrode; a source electrode and a drain electrode of the thin-film transistor connected to a semiconductor film, and the lower side shading film which is formed as a lamination film, containing a first film to be composed by using a material containing aluminium; and a second film to be composed by using a material containing titanium and also is provided between the substrate and the active layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
