发明名称 DETERIORATION/ANOMALY DETECTION DEVICE FOR SEMICONDUCTOR RADIATION DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a deterioration/anomaly detection device for a semiconductor radiation detector to properly perform anomaly diagnosis on the radiation detector without giving rise to false recognition due to temperature change. SOLUTION: By the irradiation of electromagnetic wave pulses from an oscillator 17, wave height distribution of pulse height values is acquired from the semiconductor radiation detector 11 by a wave height discrimination part 21. Further, an anomaly in a bias voltage of the radiation detector 11 is detected by a bias voltage anomaly detecting means 15 while an anomaly in a supply power source voltage to an amplifier for amplifying a detection signal of the radiation detector is detected by a supply power source anomaly detection means 24. When the bias voltage and the source voltage are normal while the height distribution from the discrimination part 21 deviates from a normal range, a wave height distribution analysis means 16 finds the temperature of the radiation detector based on the height distribution. When wave height distribution corrected as to the temperature deviates from a prescribed range, semiconductor crystals of the radiation detector are determined to be deteriorated or anomalous. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005283327(A) 申请公布日期 2005.10.13
申请号 JP20040097572 申请日期 2004.03.30
申请人 TOSHIBA CORP;TOSHIBA PLANT SYSTEMS & SERVICES CORP 发明人 NAITO SUSUMU;MITSUBORI MINENORI;ONO NOBUAKI
分类号 G01T1/24;G01T7/00;H01L31/09;(IPC1-7):G01T1/24 主分类号 G01T1/24
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