| 摘要 |
A semiconductor memory device includes a first memory cell block that has one end connected to the first bit line and the other end connected to a common node, the first memory cell block including a plurality of series-connected unit cells, and a second memory cell block that has one end connected to the second bit line which is complementary to the first bit line and the other end connected to the common node, the second memory cell block including a plurality of series-connected unit cells. When data is restored in a selected unit cell, a potential corresponding to the first bit line is applied to one end of the selected unit cell and a complementary potential corresponding to the second bit line is applied to the other end of the selected unit cell via the common node.
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