| 摘要 |
An exposure apparatus for exposing a mask pattern onto an object by using a light with wavelength of approximately 11 nm, said exposure apparatus comprising a projection optical system that includes a reflection-type optical element that has a multilayer film including a Be layer, and a reflection-type mask comprising a multilayer film that includes a first layer that has a first refractive index, and a second layer that has a second refractive index that has a real part that is larger than a real part of the first refractive index, said reflection-type mask includes the mask pattern, wherein said the first layer includes a beryllium, chrome, cobalt, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, or tungsten, wherein said the second layer includes a lithium, boron, carbon, nitrogen, oxygen, fluorine, silicon, aluminum, titanium, scandium, iron, germanium, lanthanum, magnesium, tungsten, strontium, yttrium, or zirconium. |
