发明名称 |
Halbleiterbauteil mit einer strahlungsabsorbierenden leitenden Schutzschicht und Verfahren zur Herstellung derselben |
摘要 |
A method is disclosed in which a lightly doped region in a semiconductor layer is obtained by diffusing dopant atoms of a first and second type into the underlying semiconductor layer. Preferably, the method is applied to the formation of lightly doped source and drain regions in a field effect transistor so as to obtain a required gradual dopant concentration transition from the general region to the drain and source regions for avoiding the hot carrier effect. Advantageously, a diffusion of the dopant atoms is initiated during an oxidizing step in which the thickness of the gate insulation layer is increased at the edge portions thereof. |
申请公布号 |
DE10056869(B4) |
申请公布日期 |
2005.10.13 |
申请号 |
DE2000156869 |
申请日期 |
2000.11.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK, KARSTEN;HAUSE, FREDERICK N.;HORSTMANN, MANFRED |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/556;H01L23/488 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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