A SILICON GERMANIUM SURFACE LAYER FOR HIGH-K DIELECTRIC INTEG RATION

摘要

A method for using a silicon germanium (SiGe) surface layer (160) to integrate a high-k dielectric layer (180) into a semiconductor device. The method forms a SiGe surface layer (160) on a substrate (150) and deposits a high-k dielectric layer (180) on the SiGe surface layer (160). An oxide layer (170), located between the high-k dielectric layer (180) and an unreacted portion of the SiGe surface layer (160), is formed during one or both of deposition of the high-k dielectric layer (180) and an annealing process after deposition of the high-k dielectric layer (180). The method further includes forming an electrode layer (190) on the high-k dielectric layer (180).