发明名称 Double side probing of semiconductor devices
摘要 A probe head for testing the properties of a semiconducting device ( 10 ) under test including a dielectric film ( 24 ) supporting at least one semiconducting device ( 10 ) under test with a support frame ( 26 ) tautly supporting the dielectric film ( 24 ). A first support ( 40 ) positions a first probe ( 28 ) for electrically contacting a first side ( 16 ) of the semiconducting device ( 10 ) under test and a second support ( 34 ), having a actuator to move a second probe ( 30 ) between a first position (P 1 ) and a second position (P 2 ), positions second probe ( 30 ) with the second position (P 2 ) being for electrically contacting an opposing second side ( 18 ) of the semiconductor device under test.
申请公布号 US2005225339(A1) 申请公布日期 2005.10.13
申请号 US20050095808 申请日期 2005.03.30
申请人 HOPE JEREMY;OVERALL ADRIAN R;FITZPATRICK JOHN J 发明人 HOPE JEREMY;OVERALL ADRIAN R.;FITZPATRICK JOHN J.
分类号 G01R1/067;G01R1/073;G01R31/02;G01R31/26;(IPC1-7):G01R31/02 主分类号 G01R1/067
代理机构 代理人
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