发明名称 ALUMINUM NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an aluminum nitride substrate in which quality corresponding to required characteristics is secured and a method of manufacturing an aluminum substrate by which the aluminum nitride substrate having the quality corresponding to the required characteristics is easily manufactured. <P>SOLUTION: The aluminum nitride substrate has a plate-like aluminum nitride sintered compact (aluminum nitride substrate 2) having an upper surface used as a substrate mounting face and containing carbon, and an electrode 3 of a wire-like or planar conductive body embedded in the nearly same plane in the aluminum nitride sintered compact. The carbon contains free carbon and the concentration of the free carbon in the aluminum nitride sintered compact existing in the upper part A of the electrode in the nearly same plane is different from that of free carbon in the aluminum sintered compact existing between electrodes C and in the lower part B of the electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005281046(A) 申请公布日期 2005.10.13
申请号 JP20040096032 申请日期 2004.03.29
申请人 NGK INSULATORS LTD 发明人 HATTORI AKIYOSHI
分类号 C04B35/581;B32B9/00;H01L21/68;H01L21/683;H01L23/15 主分类号 C04B35/581
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