| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture an organic thin-film transistor having a short channel length. SOLUTION: The method includes the steps of: forming a first lower layer electrode 3a on the right side on a substrate and forming a second lower layer electrode 3b on the left side; forming a first upper layer electrode 4a and forming a second upper layer electrode 2b on the second lower layer electrode 3b, by alternately performing first filming for irradiating the second lower layer electrode 2b with electrode material flux 8a from the upper right side with a left side terminal of the first lower layer electrode 3a as a mask, to deposit the second upper layer electrode 4b on the second lower layer electrode 3b and second filming for irradiating the first lower layer electrode 3a with electrode material flux 8b from the upper left side with a right side terminal of the second lower layer electrode 3b as a mask, to deposit the first upper layer electrode 4a; and defining an electrode comprising the first lower layer electrode 3a and the first upper layer electrode 4a and an electrode comprising the second lower layer electrode 3b and the second upper layer electrode 4b as a source electrode and a drain electrode, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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