发明名称 Method for producing material of electronic device
摘要 A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed.
申请公布号 US2005227500(A1) 申请公布日期 2005.10.13
申请号 US20040509372 申请日期 2004.09.28
申请人 TOKYO ELECTRON LIMITED 发明人 SUGAWARA TAKUYA;TADA YOSHIHIDE;OHTA TOMOHIRO
分类号 C23C16/511;H01J37/32;H01L21/02;H01L21/316;(IPC1-7):H01L21/336 主分类号 C23C16/511
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