发明名称 |
Method for producing material of electronic device |
摘要 |
A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed.
|
申请公布号 |
US2005227500(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040509372 |
申请日期 |
2004.09.28 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUGAWARA TAKUYA;TADA YOSHIHIDE;OHTA TOMOHIRO |
分类号 |
C23C16/511;H01J37/32;H01L21/02;H01L21/316;(IPC1-7):H01L21/336 |
主分类号 |
C23C16/511 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|