发明名称 |
Mask ROM and the method of forming the same and the scheme of reading the device |
摘要 |
The structure of the nonvolatile memory comprises a substrate having source/drain formed at unselected sides and source/drain with extension source/drain formed at other selected sides. A gate dielectric layer is formed on the substrate and a gate is formed on the gate dielectric layer. An isolation layer is formed along the surface of the gate. Spacers are formed attached on the sidewalls of the gate.
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申请公布号 |
US2005227420(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050134949 |
申请日期 |
2005.05.23 |
申请人 |
APPLIED INTELLECTUAL PROPERTIES CO., LTD. |
发明人 |
JENG ERIK S. |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L21/8246;H01L27/112;H01L29/51;H01L29/78;(IPC1-7):H01L21/00;H01L21/84;H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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