| 发明名称 |
Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |
| 摘要 |
A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.
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| 申请公布号 |
US2005227453(A1) |
申请公布日期 |
2005.10.13 |
| 申请号 |
US20030504584 |
申请日期 |
2003.02.14 |
| 申请人 |
MIKI HISAYUKI;SAKURAI TETSUO;OKUYAMA MINEO |
发明人 |
MIKI HISAYUKI;SAKURAI TETSUO;OKUYAMA MINEO |
| 分类号 |
C30B29/38;C23C16/34;C30B23/00;C30B25/00;C30B25/02;C30B25/14;C30B28/12;C30B28/14;H01L21/20;H01L21/205;H01L21/76;H01L33/00;H01L33/12;H01L33/32;H01L33/38;H01L33/42;H01S5/323;H01S5/343;(IPC1-7):C30B23/00 |
主分类号 |
C30B29/38 |
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