发明名称 DIODE ELEMENT AND DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a diode element which can be suitably used for an electron source, a light emitting diode, and a light receiving element formed with semiconductor fine crystal layer like an effective and stable nano-crystalline silicon layer with a long life. <P>SOLUTION: The diode element (6) is composed of a semiconductor substrate or a conductive substrate (11) having an electrode (10) on a back surface, a semiconductor fine crystal layer (9) formed on the substrate or at the front face side thereof, and a surface electrode (7) formed on the semiconductor fine crystal layer (9). Vapor annealing treatment is applied to the semiconductor fine crystal layer (9). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005285380(A) 申请公布日期 2005.10.13
申请号 JP20040093698 申请日期 2004.03.26
申请人 QUANTUM 14:KK;KOSHIDA NOBUYOSHI 发明人 KOSHIDA NOBUYOSHI;KOJIMA AKIRA;SAMEJIMA TOSHIYUKI;SHIMADA JUICHI
分类号 H01J29/04;H01J1/312;H01J1/62;H01J9/02;H01J31/12;H01L33/34;H01L33/40;H01L33/50 主分类号 H01J29/04
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