发明名称 |
DIODE ELEMENT AND DEVICE USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode element which can be suitably used for an electron source, a light emitting diode, and a light receiving element formed with semiconductor fine crystal layer like an effective and stable nano-crystalline silicon layer with a long life. <P>SOLUTION: The diode element (6) is composed of a semiconductor substrate or a conductive substrate (11) having an electrode (10) on a back surface, a semiconductor fine crystal layer (9) formed on the substrate or at the front face side thereof, and a surface electrode (7) formed on the semiconductor fine crystal layer (9). Vapor annealing treatment is applied to the semiconductor fine crystal layer (9). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005285380(A) |
申请公布日期 |
2005.10.13 |
申请号 |
JP20040093698 |
申请日期 |
2004.03.26 |
申请人 |
QUANTUM 14:KK;KOSHIDA NOBUYOSHI |
发明人 |
KOSHIDA NOBUYOSHI;KOJIMA AKIRA;SAMEJIMA TOSHIYUKI;SHIMADA JUICHI |
分类号 |
H01J29/04;H01J1/312;H01J1/62;H01J9/02;H01J31/12;H01L33/34;H01L33/40;H01L33/50 |
主分类号 |
H01J29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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