发明名称 MULTILAYER WIRING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a multilayer wiring structure, capable of an increase of a degree of planarity on a surface after CMP, even in an area where a conductive pattern cannot be disposed. SOLUTION: A first area (10), an annular second region (11) surrounding the first area and a third region (12) surrounding the second region are zoned on a surface of a support substrate (20). A first wiring layer (M8L) is disposed on a support substrate. A wiring is formed in the third region of the first wiring layer, a dummy pattern is formed in the second region, and the conductive pattern is not formed in the first region. A functional element (1) is disposed on the first wiring layer and inside the first region. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005285970(A) 申请公布日期 2005.10.13
申请号 JP20040095535 申请日期 2004.03.29
申请人 FUJITSU LTD 发明人 KARASAWA AKITAKA;OTSUKA TOSHIYUKI
分类号 H01L21/3205;H01L21/027;H01L21/768;H01L21/822;H01L23/48;H01L23/52;H01L23/522;H01L27/04;H01L29/00;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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