| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Gunn diode which can be manufactured with good reproducibility and can enhance an oscillation efficiency. <P>SOLUTION: A first semiconductor layer composed of a high concentration n-type GaAs, an active layer composed of a low concentration n-type GaAs, a second semiconductor layer composed of the high concentration n-type GaAs, a third semiconductor layer composed of non-doped InGaAlP and a fourth semiconductor layer composed of a high concentration InGaP are sequentially laminated on a semiconductor substrate composed of the high concentration n-type GaAs. The active layer is zoned so as to function as the Gunn diode by a recess part or a high resistive layer, and the Gunn diode comprises a first electrode and a second electrode connected to the active layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
