| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser element having a DBR part exhibiting high reflectivity, even with few layers. SOLUTION: The surface-emitting semiconductor laser element comprises an upper DBR part 7, a lower DBR part 3, and an active layer 5 provided between the upper DBR part 7 and the lower DBR part 3. The upper DBR part 7 has a plurality of GaAs layers 31 and aluminium oxide layers 33 stacked alternately. When the refractive index difference is large between two adjacent layers, reflectivity can be enhanced at the DBR part, even if the number of layers is small. Since the refractive index n(Al<SB>2</SB>O<SB>3</SB>) of Al<SB>2</SB>O<SB>3</SB>is 1.67 and the refractive index n(GaAs) of GaAs is 3.51 for a light having a wavelength of 1.3μm, the difference in the refractive indexΔn is 1.85. COPYRIGHT: (C)2006,JPO&NCIPI
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