| 发明名称 |
Microelectronic device with depth adjustable sill and method of fabrication thereof |
| 摘要 |
A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode. The microelectronic device includes at least one sill region for the enhancement of electron and/or hole mobility.
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| 申请公布号 |
US2005224786(A1) |
申请公布日期 |
2005.10.13 |
| 申请号 |
US20040819250 |
申请日期 |
2004.04.06 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHUAN Y.;LEE WEN C.;CHANG SUN J.;WU SHIEN Y. |
| 分类号 |
H01L21/223;H01L21/336;H01L21/8234;H01L29/786;H01L31/109;(IPC1-7):H01L31/109 |
主分类号 |
H01L21/223 |
| 代理机构 |
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代理人 |
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