| 发明名称 |
Process for manufacturing mems |
| 摘要 |
The invention concerns a process for manufacturing a Micro-Electro-Mechanical-System (MEMS) comprising the use of a sacrificial layer, the process being characterized by the fact that the sacrificial layer is made of silicon. The invention also concerns MEMS devices such as SG-MOSEFT, MEMS switches or MEMS tunable capacitors which may be obtained according to the previous cited process.
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| 申请公布号 |
US2005227428(A1) |
申请公布日期 |
2005.10.13 |
| 申请号 |
US20040507920 |
申请日期 |
2004.10.19 |
| 申请人 |
MIHAI IONESCU A;PHILIPPE FLUCKIGER;CYRILLE HIBERT;RAPHAEL FRITSCHI;VINCENT POTT |
发明人 |
MIHAI IONESCU A.;PHILIPPE FLUCKIGER;CYRILLE HIBERT;RAPHAEL FRITSCHI;VINCENT POTT |
| 分类号 |
B81B3/00;H01G5/16;H01H59/00;(IPC1-7):H01L21/823 |
主分类号 |
B81B3/00 |
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