| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which resistance of a p-type III-V group compound semiconductor layer including nitrogen can be made low without deteriorating an active layer. <P>SOLUTION: A p-type InGaAlN layer 2, an InGaAlN active layer 3 and an n-type InGaAlN layer 4, in which composition is represented by (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>N(0≤x≤1 and 0≤y≤1), are formed on a sapphire substrate 1. Mg is connected with a hydrogen atom in the p-type InGaAlN layer 2 in a state of as-grown. Laser is irradiated from the rear face of the sapphire substrate 1 under nitrogen atmosphere. Resistance is lowered by hydrogen removal of the p-type InGaAlN layer 2 with irradiation of weak laser. Diffusion of dopant in a lamination part 10 is suppressed, and steep property of a dopant profile can be maintained. The sapphire substrate 1 can be detached from the lamination part 10 by irradiation of strong laser. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
