发明名称 SENSE AMPLIFIER CIRCUIT, ITS DRIVING METHOD, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a sense amplifier capable of correcting the threshold value of a TFT without increasing a circuit scale or cost in a sense amplifier using the TFT. <P>SOLUTION: This sense amplifier circuit 22 is provided with a pair of amplification transistors N1 and N2, and designed to amplify a potential difference generated between a pair of digit lines C and D. In this case, while both ends of each of the pair of amplifier transistors N1 and N2 are floated, the gates thereof are precharge-controlled to the potential by a precharge circuit 21. After this precharge-control, while a predetermined potential is applied to a common connection point F to which ends of the pair of amplification transistors are commonly connected, each of the pair of amplification transistors is subjected to diode-connection control by transistors N5 and N6 to correct a threshold value difference between the pair of amplification transistors. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005285291(A) 申请公布日期 2005.10.13
申请号 JP20040101825 申请日期 2004.03.31
申请人 NEC CORP 发明人 OTOSE TOMOHIKO
分类号 G11C11/419;G09G3/20;G09G3/30;G09G3/36;G11C11/409;H01L27/10 主分类号 G11C11/419
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