| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a semiconductor storage device having a page mode readout function in which an increase in peak current and an increase in layout area are suppressed to the minimum. <P>SOLUTION: After outputting sense data SD of four words at a first half to a page data latch 5, a sense amplifier 3 and a sense data latch 4 execute a sense amplifying operation and a latch operation in parallel for the memory cell information of four words at a second half outputted from a Y gate 2 by the control of a sense signal #SS and a latch signal SL1 during a page mode readout period of time of the data of four words at the first half as external data DO by the page data latch 5, a selector circuit 6, and an output buffer 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
