发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND ITS FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which shows a fully stabilized signal detection operation. SOLUTION: In addition to a layered product S1 provided with a synthetic spin-valve structure (SySV) 10 including a ferromagnetic free layer 9, this MR element 1 includes a longitudinal bias layer 12 via a decoupling layer 11 on the layered product S1, and further includes a stitched structure S2, having an area larger than that of the longitudinal bias layer 12 in a parallel cross section so as to join to the longitudinal bias layer 12. This allows a stabilized exchange bias magnetic field to be given to the ferromagnetic free layer 9 by the exchange coupling between a synthetic pinning layer 20 and the longitudinal bias layer 12, and the ferromagnetic free layer 9. Consequently, the formation of a single magnetic domain in the ferromagnetic free layer 9 can be fully promoted, so that the fully stabilized signal detection operation can be performed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005286340(A) 申请公布日期 2005.10.13
申请号 JP20050098215 申请日期 2005.03.30
申请人 HEADWAY TECHNOLOGIES INC 发明人 LI MIN;ZHENG YOUFENG;ZHANG KUNLIANG;RYO KANCHU;JU KOCHAN
分类号 G01R33/09;G11B5/127;G11B5/33;G11B5/39;H01F10/16;H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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