发明名称 |
Method of forming a tantalum-containing gate electrode structure |
摘要 |
A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH<SUB>3</SUB>)<SUB>2</SUB>)<SUB>3</SUB>(NC(C<SUB>2</SUB>H<SUB>5</SUB>)(CH<SUB>3</SUB>)<SUB>2</SUB>)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.
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申请公布号 |
US2005227441(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040830804 |
申请日期 |
2004.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NAKAMURA KAZUHITO;YAMASAKI HIDEAKI;KAWANO YUMIKO;LEUSINK GERT J.;MCFEELY FENTON R.;YURKAS JOHN J.;NARAYANAN VIJAY |
分类号 |
H01L21/28;H01L29/49;H01L29/51;(IPC1-7):H01L21/336;C30B1/00;H01L21/20;H01L21/320;H01L21/36;H01L21/44;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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