METHOD AND APPARATUS FOR FABRICATING ULTRA-SHALLOW JUNCTION METAL-OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES.

摘要

A method and apparatus for fabricating a metal oxide semiconductor integrated circuit device, the method comprising sequentially: (a) providing a gate (106) on a substrate (100); (b) providing a spacer (108) on a sidewall of said gate (106); (c) forming a source/drain region (110) in said substrate (100); (d) substantially completely removing said spacer (108); (e) forming a source/drain extension region (114) in said substrate (100); (f) forming a source drain pocket region (116) in said substrate (100), beneath said gate (106); and (g) performing an annealing process to substantially simultaneously electrically activate said source/drain region (110), said source/drain extension region (114) and said source/drain pocket region (116).