| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a high breakdown pressure is obtained, and resistance to fracture is improved. SOLUTION: This semiconductor device is configured by properly setting a relation among a distance W<SB>m1</SB>between second conductive base embedded regions 44a positioned adjacently on the bottom face of one base diffusion region 17a among a plurality of second conductive base diffusion regions 17a, a distance W<SB>m2</SB>between the base embedded regions 44a positioned adjacently on the bottom faces of the different base diffusion regions 17a, and a distance W<SB>PE</SB>in between a plurality of second concentric conductive guard embedded regions 44b arranged so that the plurality of base diffusion regions 17a can be surrounded. COPYRIGHT: (C)2006,JPO&NCIPI |
