| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive composition for semiconductor that can efficiently and highly accurately polish a semiconductor device, without producing polishing marks on the semiconductor device by preventing the aggregation of fumed silica. <P>SOLUTION: The abrasive composition for semiconductor uses fumed silica having a bulk density of≥50 g/L and <100 g/L, in a state of powder before dispersion as abrasive grains, and more preferable, if the bulk density of the fumed silica is adjusted to 75-85 g/L. In this way, the dispersed state of the fumed silica is made proper, and in addition, the transportation cost of the composition can be reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
