| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, wherein the distance up to the second base electrode of the base region, near the center of a second emitter electrode, is large and drawing of carrier is delayed in a semiconductor device, including a ladder-shaped first base electrode, a narrow and longer first emitter electrode, a flat type second base electrode, and a second emitter electrode in which the bonding region can be ensured and the wire-bonding location is effectively arranged for the first emitter electrode. SOLUTION: In the semiconductor device wherein a base and an emitter terminals are guided to a side of chip, the flat second emitter electrode is provided, and the first emitter electrode is extended vertically for the chip side where an external terminal is allocated; and a projected part of the second base electrode is provided near the center of the second emitter electrode. Accordingly, the base region of the cell near the center of the second emitter electrode can be provided adjacent to the second base electrode. Consequently, emitter resistance can be lowered, and drawing rate of the carrier of the base region can be improved. COPYRIGHT: (C)2006,JPO&NCIPI |
