| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming composition which is superior in heat resistivity and dielectric constant characteristics, especially, in CMP durability for forming a silicon system film, having a proper uniform thickness suitably available as an inter-layer insulating film in a semiconductor element, and to provide a porous insulating film which uses this film-forming composition and a method for manufacturing the film. SOLUTION: An insulating film forming composition includes a siloxane compound having a thermal decomposable base which decomposes at 300°C to 400°C, a porous insulating film using this, and a method for manufacturing this are obtained. COPYRIGHT: (C)2006,JPO&NCIPI |
