发明名称 |
High voltage semiconductor device utilizing a deep trench structure |
摘要 |
A semiconductor device includes a substrate having a source, a drain, and a gate between the source and the drain. Both the source and the drain include a first edge, and the gate includes a first portion. A first deep trench structure is situated under the first portion of the gate and proximate to the first edge of the source and the first edge of the drain.
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申请公布号 |
US2005224896(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040821432 |
申请日期 |
2004.04.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. |
发明人 |
WU CHEN-BAU;HSU SHUN-LIANG;WU YOU-KUO;JONG YU-CHANG |
分类号 |
H01L21/28;H01L29/06;H01L29/45;H01L29/49;H01L29/51;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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