发明名称 |
METHOD FOR INTRODUCING IMPURITIES |
摘要 |
A method for introducing impurities comprising a step for forming an amorphous layer on the surface of a semiconductor substrate, and a step for forming a shallow impurity introduction layer on the semiconductor substrate rendered amorphous characterized in that the step for forming the amorphous layer is a step for irradiating the surface of the semiconductor substrate with plasma, and the step for forming a shallow impurity introduction layer is a step for introducing impurities into the surface rendered amorphous. |
申请公布号 |
KR20050098923(A) |
申请公布日期 |
2005.10.12 |
申请号 |
KR20057014878 |
申请日期 |
2005.08.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SASAKI YUICHIRO |
分类号 |
H01L21/223;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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