| 摘要 |
A ferroelectric capacitor including a bottom electrode layer, a ferroelectric layer on the bottom electrode layer, and a top electrode layer on the ferroelectric layer, in which a ferroelectric is formed on the bottom electrode layer so as to have a dominant axis of orientation, the bottom electrode layer has a multilayer structure, and the layers of the bottom electrode have larger coefficients of diffusion of component elements of the ferroelectric or compounds comprised of the component elements to the bottom electrode the closer the layers to the ferroelectric layer. This is produced by a method including a step of forming a ferroelectric layer by metal organic chemical vapor deposition and heating a substrate when forming this ferroelectric layer and a step of passing organometallic precursor including at least one type of the component elements of the ferroelectric layer to form the ferroelectric layer on the bottom electrode and form the component elements of the first layer of the bottom electrode contiguous with the ferroelectric layer and the component elements of the ferroelectric layer into an alloy or compound. A ferroelectric capacitor formed so that the morphology is good and the ferroelectric has a dominant axis of orientation is obtained. <IMAGE>
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