| 摘要 |
The structure of a zinc oxide resistor having an oxide glass layer containing bismuth and boron between zinc oxide grains, a glass layer needed to produce the zinc oxide resistor, and a method for producing the resistor are disclosed. The oxide glass layer formed between zinc oxide grains varies the electrical properties between grains, realizing a high resistance and a non-ohmicity of the resistance to voltage. The non-ohmicity can be applied to, particularly, a non-ohmic element adapted to low voltage. Unlike the conventional techniques, an oxide glass layer is present between zinc oxide grains, and hence the mechanical bonding strength of the element is improved.
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