发明名称 |
SILICON SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD |
摘要 |
A method for manufacturing a silicon semiconductor substrate for semiconductor integrated circuit devices exhibiting a higher carrier mobility of the (110) surface, particularly a higher mobility of electrons that are carriers of an n-type FET. The surface is planarized on the order of atom size by a conventional RCA cleaning without carrying out any special cleaning and without carrying out radial oxidation, and resultantly the surface roughness is reduced. The major surfaces of the substrate are (110) surfaces or inclined (110) surfaces. Steps with magnitudes on the order of atom size are formed on the surface of the substrate generally along the direction.
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申请公布号 |
KR20050098860(A) |
申请公布日期 |
2005.10.12 |
申请号 |
KR20057012728 |
申请日期 |
2004.01.29 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;OHMI TADAHIRO |
发明人 |
YAMANAKA HIDEKI;DEMIZU KIYOSHI;OHMI TADAHIRO;TERAMOTO AKINOBU;SUGAWA SHIGETOSHI |
分类号 |
C30B29/06;H01L21/02;H01L21/28;H01L21/306;H01L21/3105;(IPC1-7):H01L21/02;H01L29/78;H01L21/20 |
主分类号 |
C30B29/06 |
代理机构 |
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地址 |
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