Mixed-phase compressive tantalum thin films and method for forming same

摘要

The invention includes a method (200) of forming mixed-phase compressive tantalum thin films (112) using nitrogen residual gas. The method (200) of the present invention may include selecting (204) a pressure of nitrogen residual gas during plasma sputtering corresponding to a predefined ratio of beta-to alpha-tantalum. The method (200) may be performed at substrate temperatures less than 300 {C. Mixed-phase compressive tantalum thin films (112) and fluid ejection devices (100) are also disclosed.