发明名称 MASK PATTERN FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING THE SAME, METHOD OF PREPARING COATING COMPOSITION FOR FORMING FINE PATTERNS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A mask pattern for semiconductor device fabrication is dislosed. A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymercomplex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.</p>
申请公布号 KR20050098745(A) 申请公布日期 2005.10.12
申请号 KR20040057163 申请日期 2004.07.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HATA MITSUHIRO;HAH, JUNG HWAN;KIM, HYUN WOO;WOO, SANG GYUN
分类号 H01L21/027;G03F1/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址