发明名称 |
MASK PATTERN FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING THE SAME, METHOD OF PREPARING COATING COMPOSITION FOR FORMING FINE PATTERNS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A mask pattern for semiconductor device fabrication is dislosed. A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymercomplex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.</p> |
申请公布号 |
KR20050098745(A) |
申请公布日期 |
2005.10.12 |
申请号 |
KR20040057163 |
申请日期 |
2004.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HATA MITSUHIRO;HAH, JUNG HWAN;KIM, HYUN WOO;WOO, SANG GYUN |
分类号 |
H01L21/027;G03F1/00;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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