发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.
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申请公布号 |
US6953753(B2) |
申请公布日期 |
2005.10.11 |
申请号 |
US20030373964 |
申请日期 |
2003.02.27 |
申请人 |
DENSO CORPORATION |
发明人 |
OOHARA JUNJI;KANO KAZUHIKO;MUTO HIROSHI |
分类号 |
B81B3/00;B81C1/00;G01P15/08;G01P15/125;H01L29/84;(IPC1-7):H01L21/302 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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