发明名称 |
Semiconductor filter circuit and method |
摘要 |
A filter circuit ( 10 ) is formed on a semiconductor substrate ( 11 ) formed with a trench ( 40 ) that is lined with a dielectric layer ( 38 ). A conductive material ( 37 ) is disposed in the trench and coupled to a node ( 62 ) to provide a capacitance that modifies a frequency response of an input signal (V<SUB>IN</SUB>) to produce a filtered signal (V<SUB>OUT</SUB>). An electrostatic discharge device includes an inductor ( 74 ) coupled to back to back diodes ( 17, 18 ) formed in the substrate to avalanche when a voltage on the node reaches a predetermined magnitude.
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申请公布号 |
US6953980(B2) |
申请公布日期 |
2005.10.11 |
申请号 |
US20020166288 |
申请日期 |
2002.06.11 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
ESCOFFIER RENE;STEFANOV EVGUENIY;PEARSE JEFFREY;ROBB FRANCINE Y.;ZDEBEL PETER J. |
分类号 |
H01L27/02;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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