发明名称 Semiconductor filter circuit and method
摘要 A filter circuit ( 10 ) is formed on a semiconductor substrate ( 11 ) formed with a trench ( 40 ) that is lined with a dielectric layer ( 38 ). A conductive material ( 37 ) is disposed in the trench and coupled to a node ( 62 ) to provide a capacitance that modifies a frequency response of an input signal (V<SUB>IN</SUB>) to produce a filtered signal (V<SUB>OUT</SUB>). An electrostatic discharge device includes an inductor ( 74 ) coupled to back to back diodes ( 17, 18 ) formed in the substrate to avalanche when a voltage on the node reaches a predetermined magnitude.
申请公布号 US6953980(B2) 申请公布日期 2005.10.11
申请号 US20020166288 申请日期 2002.06.11
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 ESCOFFIER RENE;STEFANOV EVGUENIY;PEARSE JEFFREY;ROBB FRANCINE Y.;ZDEBEL PETER J.
分类号 H01L27/02;(IPC1-7):H01L29/00 主分类号 H01L27/02
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