发明名称 |
Hydrogenated oxidized silicon carbon material |
摘要 |
A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.
|
申请公布号 |
US6953984(B2) |
申请公布日期 |
2005.10.11 |
申请号 |
US20040827065 |
申请日期 |
2004.04.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRILL ALFRED;JAHNES CHRISTOPHER VINCENT;PATEL VISHNUBHAI VITTHALBHAI;PERRAUD LAURENT CLAUDE |
分类号 |
H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/58;H01L23/48 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|