Polysilicon material and semiconductor devices formed therefrom

摘要

A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.